부산대학교 도서관

This paper presents a comprehensive analysis of power MOSFET transistor fast switching speed effects of EMI generation on the neighboring low power electronics circuit and the extra thermal dissipation impact due to reduced commutation speed. The study is based on both electromagnetic analysis and thermal computation of the elaborated and tested models for the transistor switching cycle under normal operation. The MOSFET model specifications are presented. Numerical simulations based on the nonlinear capacitive model are used to compute the EMI as well as the thermal dissipation using Matlab®. The simulation results are validated experimentally on a laboratory MOSFET device's test circuit delivering up to 1000 A/μS. The results show clearly the validity of the new proposed approach and the compromise between EMI generation and thermal consideration to design gate drive circuit for power MOSFET devices.