학술논문
Template-based MOSFET device model
Document Type
Periodical
Author
Source
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on. 14(8):924-933 Aug, 1995
Subject
Language
ISSN
0278-0070
1937-4151
1937-4151
Abstract
This paper describes a novel method of representing the three-dimensional MOSFET current table. The method utilizes a template constructed from a drain sweep curve. This template is compressed/expanded and scaled to match all other possible drain sweep curves. This modeling technique provides more than a 10x reduction in storage space requirements, relative to a true three-dimensional table, with little loss in accuracy. It will also be shown that the method can be extended to model the intrinsic charge surfaces.ETX