학술논문
A 200 mm SiGe-HBT technology for wireless and mixed-signal applications
Document Type
Conference
Author
Harame, D.L.; Schonenberg, K.; Gilbert, M.; Nguyen-Ngoc, D.; Malinowski, J.; Jeng, S.-J.; Meyerson, B.; Cressler, J.D.; Groves, R.; Berg, G.; Tallman, K.; Stein, K.; Hueckel, G.; Kermarrec, C.; Tice, T.; Fitzgibbons, G.; Walter, K.; Colavito, D.; Houghton, T.; Greco, N.; Kebede, T.; Cunningham, B.; Subbanna, S.; Comfort, J.H.; Crabbe, E.F.
Source
Proceedings of 1994 IEEE International Electron Devices Meeting Electron devices Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International. :437-440 1994
Subject
Language
ISSN
0163-1918
Abstract
If SiGe-HBT technology is to successfully compete with GaAs technology in the rapidly emerging wireless communications market, it must demonstrate comparable performance, higher integration levels, compatibility with high volume production, and hence reduced costs. This work describes the first manufacturable 0.5 /spl mu/m SiGe-HBT technology for wireless communications applications which meets these requirements. The technology is currently installed on a 200 mm production line, using a commercial UHV/CVD system for SiGe film growth. AC transistor results (f/sub max/>45 GHz, power added efficiency=66%) demonstrate that this 200 mm SiGe technology is suitable for /spl ges/2.0 GHz RF applications. Record performance was achieved in a 1.2 GS/sec,