학술논문

Determination of the refractive indices and interfaces of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/ layers on InP in the wavelength range from 280 to 1900 nm
Document Type
Conference
Source
1993 (5th) International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on. :576-579 1993
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Indium phosphide
Wavelength measurement
Time measurement
Spectroscopy
Ellipsometry
Gallium arsenide
Atomic beams
Atomic layer deposition
Atomic measurements
Molecular beam epitaxial growth
Language
Abstract
The refractive indices of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/Ga/sub 0.26/As/InP were measured for the first time in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry. The results on InP and GaAs are in good agreement with the measurements in the literature. The interface layer due to the exchange of phosphorus and arsenic atoms during the desorption procedure of the molecular beam epitaxy growth exists and was also found by high resolution X-ray diffraction.ETX