학술논문
Electronic Transport Characteristics of Gallium Nitride Nanowire-based Nanocircuits
Document Type
Conference
Author
Source
2006 Sixth IEEE Conference on Nanotechnology Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on. 2:496-499 2006
Subject
Language
ISSN
1944-9399
Abstract
Electronic transport studies of a two-phase gallium nitride nanowire are explored. Current-voltage measurements are taken of gallium nitride based three terminal field effect transistors fabricated via electron beam lithography. The measurements indicate a working field effect transistor utilizing a global back gate configuration. Very high current levels within the nanowire are reported. Direct transport measurements are also taken via two nanomanipulator probes. High current levels in this experiment are also observed. Scanning Probe Recognition Microscopy is used to detect the contact pad and nanowire radial boundary, and a nanowire auto-focus experiment is reported.