학술논문
Gate Sinking Effect of 0. 1 μm InP HEMT MMICs Using Pt/Ti/Pt/Au
Document Type
Conference
Author
Source
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings Indium Phosphide and Related Materials Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on. :188-191 2006
Subject
Language
ISSN
1092-8669
Abstract
Gate sinking effect of 0.1 mum InAlAs/InGaAs/InP HEMT MMICs (with Pt/Ti/Pt/Au gate metals) subjected to elevated temperature lifetests has been investigated. The results show that Pt sinking is the dominant degradation mechanism caused by Pt diffusing into the In 0.52 Al 0.4 As Schottky barrier layer. Pt sinking explains the observed evolutions of Schottky diodes, Ids-Gm transfer characteristics, and the S21 increase. Scanning-transmission-electron-microscope micrographs substantiate the alleviation of Schottky junction degradation of InP HEMTs using Pt/Ti/Pt/Au gates. Moreover, 2-temperature lifetest shows that the activation energy is approximately 1.55 eV, based on a failure criterion of DeltaI DSS = -20%. The results from this study demonstrate that Pt sinking is the primary degradation mechanism of 0.1 mum InP HEMT MMICs with Pt/Ti/Pt/Au gate metals