학술논문
Avalanche noise in In/sub 0.53/Ga/sub 0.47/As avalanching regions
Document Type
Conference
Author
Source
International Conference on Indium Phosphide and Related Materials, 2005 Indium Phosphate and Related Materials Indium Phosphide and Related Materials, 2005. International Conference on. :428-431 2005
Subject
Language
ISSN
1092-8669
Abstract
Pure electron injection multiplication noise of In/sub 0.53/Ga/sub 0.47/As has been measured on three In/sub 0.53/Ga/sub 0.47/As diode with avalanche widths of 1.8 /spl mu/m, 3.2 /spl mu/m and 4.8 /spl mu/m. Very low excess noise has been measured and the associated electron to hole ionisation coefficient ratio is from 3.3 to 5. The results confirm the previously reported large ionisation coefficient ratios at fields between 155 kVcm/sup -1/ and 310 kVcm/sup -1/.