학술논문
Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
Document Type
Conference
Author
Source
Conference on Electron Devices, 2005 Spanish Electron devices Electron Devices, 2005 Spanish Conference on. :49-52 2005
Subject
Language
ISSN
2163-4971
Abstract
A comparison between interface quality of several temperatures thermal annealed HPRS TiO/sub 2/ films and 750 /spl deg/C annealed ALD TiO/sub 2/ films has been established. Our attention has been focused on the interfacial state and disordered induced gap state densities. From our results, HPRS films submitted to in situ 900 /spl deg/C thermal annealing in oxygen atmosphere exhibit the best characteristics, with D/sub it/ density being the lowest value measured in this work (5.6 /spl times/ 10/sup 11/ cm/sup -2/ eV/sup -1/), and undetectable conductance transients within our experimental limits.