학술논문
AlInAs/GaInAs on InP HEMT low noise MMIC amplifiers
Document Type
Conference
Author
Source
1991 IEEE MTT-S International Microwave Symposium Digest Microwave Symposium Digest, 1991., IEEE MTT-S International. :815-817 vol.2 1991
Subject
Language
ISSN
0149-645X
Abstract
AlInAs/GaInAs on InP HEMT (high electron mobility transistor) single-stage low-noise MMIC (monolithic microwave integrated circuit) amplifiers have been developed for operation at 12 GHz, 35 GHz and 60 GHz. A noise figure of 0.78 dB with an associated gain of 15 dB was achieved at 12 GHz. This is the lowest noise figure yet reported for a monolithic amplifier at 12 GHz. A noise figure of 1.2 dB with gain greater than 12 dB was obtained from 10 to 14 GHz. At 35.5 GHz, 13 dB gain with 17 dB input return loss was obtained. At 55 GHz, 8 dB gain with more than 12 dB input return loss was obtained.ETX