학술논문
A review of near infrared photon emission microscopy and spectroscopy
Document Type
Conference
Author
Source
Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the. :275-281 2005
Subject
Language
ISSN
1946-1542
1946-1550
1946-1550
Abstract
Near infrared photon emission microscopy is an established fault localization technique for microelectronic failure analysis. Near infrared photon spectroscopy has the potential to become a useful defect characterization technique. In this paper, near infrared photon emission microscopy and spectroscopy are reviewed together with the instrumentation developments that allow these techniques to be effectively deployed for microelectronic failure analysis. The measurement results from pn junctions and saturated MOSFETs are correlated with the various photon emission mechanisms. Additional information that can be obtained from NIR systems over visible systems are also presented.