학술논문

CMOS Vertical Multiple Independent Gate Field Effect Transistor (MIGFET)
Document Type
Conference
Source
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573) SOI conference SOI Conference, 2004. Proceedings. 2004 IEEE International. :187-189 2004
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
FETs
FinFETs
Degradation
MOSFETs
MOS devices
Silicon
Implants
Circuit simulation
Copper
Current measurement
Language
Abstract
Perfectly self aligned vertical multiple independent gate field effect transistor (MIGFET) CMOS devices have been fabricated. The unique process used to fabricate these devices allow them to be integrated with FinFET devices. Device and circuit simulations have been used to explain the device and explore new applications using this device. A novel application of the MIGFET as a signal mixer has been demonstrated. The undoped channel, very thin body, perfectly matched gates allows charge coupling of the two signals and provide a new family of applications using the MIGFET mixer. Since the process allows integration of regular CMOS double gate devices and MIGFET devices this technology has potential for various digital and analog mixed-signal applications.