학술논문
Influence of photoperturbation on the characterization accuracy of scanning capacitance microscopy [MOSFET example]
Document Type
Conference
Author
Source
Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743) Physical and failure analysis of integrated circuits Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the. :295-298 2004
Subject
Language
Abstract
Due to the photoperturbation induced by the atomic force microscopy laser beam, typical scanning capacitance microscopy (SCM) may produce false differential capacitance images of carrier distribution and electrical junctions. For a real MOS device, the photoperturbation can lead to a broadened source/drain region and narrower effective channel length (L/sub eff/). The photoperturbation also leads to many difficulties in employing SCM to investigate the influence of annealing processes on electrical junctions. It is revealed that the photoperturbation-induced errors in the measurements of L/sub eff/ and electrical junction width may be up to 11.2% and 50%, respectively.