학술논문
Advanced STI patterning for 70 nm DRAM technology and beyond
Document Type
Conference
Author
Source
2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530) Advanced semiconductor manufacturing Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop. :84-88 2004
Subject
Language
Abstract
This paper presents the results on the patterning of shallow trench isolation for the 70 nm DRAM technology node on 300 mm wafers. Using a new triple hard mask approach incorporating a carbon film patterns with 70 nm CD and STI depth of about 250 nm could be achieved.