학술논문
Luminescence properties of semi-insulating nominally-undoped CdTe crystals
Document Type
Conference
Author
Source
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Semiconducting and insulating materials Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on. :110-113 2002
Subject
Language
Abstract
CdTe crystals were grown by the vapour phase and by Bridgman method by using high purity and stoichiometry controlled source material. Nominally undoped high resistivity crystals were reproducibly obtained. A detailed photoluminescence (PL) analysis was carried out in order to investigate the compensation mechanism of the crystals. PL spectra are dominated by the bound acceptor exciton line at 1.588 eV, showing a "p" type character. A line at 1.583 eV is also present possibly due to III group impurities. A week 1.4 eV band was also revealed.