학술논문

Advantages of Cu-Nb Reinforced Nb$_{\text{3}}$Sn Strands in Large Multi-Stage Stranded Cables With Low-Void Fraction
Document Type
Periodical
Source
IEEE Transactions on Applied Superconductivity IEEE Trans. Appl. Supercond. Applied Superconductivity, IEEE Transactions on. 34(5):1-6 Aug, 2024
Subject
Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Superconducting cables
Wires
Stress
Conductors
Prototypes
Bending
Force
Low-void fraction
multi-stage stranded cable
++%24%5F3%24<%2Ftex-math>+<%2Finline-formula>+<%2Fnamed-content>Sn%22">Nb $_3$ Sn
Nb-rod-method Cu-Nb
reinforcement
Language
ISSN
1051-8223
1558-2515
2378-7074
Abstract
A large multi-stage stranded cable structure with Nb$_{\text{3}}$Sn strands twisted at a short-pitch and compressed to a low-void fraction is a major candidate for Nb$_{\text{3}}$Sn conductors for JA-DEMO-TF coils. To realize the conductor, we have proposed the application of Nb-rod-method Cu-Nb reinforced ITER-CS type Nb$_{\text{3}}$Sn strands (Cu-Nb/Nb$_{\text{3}}$Sn wires). Prototype 4th-stage stranded cables simulated the stranded process for the ITER-CS conductor and for the JA-DEMO-TF conductor were fabricated using the Cu-Nb/Nb$_{\text{3}}$Sn strands or conventional non-reinforced ITER-CS strands (Cu/Nb$_{\text{3}}$Sn wires), and compression-formed to a low-void fraction below 30%. Cu-Nb/Nb$_{\text{3}}$Sn strands extracted from the compacted 4th-stage cables had no degradation of I c as well as Cu/Nb$_{\text{3}}$Sn strands. Destructive investigation of the compacted 4th-stage cables showed Cu-Nb/Nb$_{\text{3}}$Sn cables had better manufacturability of the large multi-stage stranded cables with low-void fraction than the conventional Cu/Nb$_{\text{3}}$Sn cables. Moreover, the Cu-Nb/Nb$_{\text{3}}$Sn triplex had improved current-carrying properties under transverse compression stresses by enhancement of the mechanical properties. In this study, the advantages of applying Cu-Nb/Nb$_{\text{3}}$Sn strands for the large multi-stage stranded cables with low-void fraction are discussed.