학술논문
Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(4):542-545 Apr, 2024
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
In this letter, the leakage performances of 4H-SiC CMOS devices, as well as inverter (INV) and NOR logic gate circuits, are evaluated after being exposed to irradiation. It has been observed that the output voltage swing of the SiC INV and NOR gate circuits decreases evidently and large leakage currents appear at the total irradiation dose of 300kGy. The mechanism of leakage current is revealed by conducting Emission Microscope test and analysis of leakage paths based on the layout. The inversion layer forms on the P-epi surface under the polysilicon gate and VDD metal after irradiation, which causes the electron leakage current flowing from N-well to P-epi. At last, suggestion on hardening 4H-SiC CMOS gate circuits is given.