학술논문
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):1408-1415 Mar, 2024
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
The p+–n–n−–n+ structure, known as Hi–Lo structure, was investigated in gallium nitride (GaN) single-drift-region (SDR) impact ionization avalanche transit-time (IMPATT) diodes to improve the output power and efficiency. The 15 GHz GaN Hi-Lo IMPATT diode was designed according to the Scharfetter and Gummel model under realistic conditions, suppressing the tunneling current (