학술논문
Monolithically Integrated 940 nm Half VCSELs on Bulk Ge Substrates
Document Type
Periodical
Author
Source
IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 36(3):203-206 Feb, 2024
Subject
Language
ISSN
1041-1135
1941-0174
1941-0174
Abstract
High-quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells (MQWs) were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. Even without any design and process optimization for the Ge substrates, the Ge-based half VCSELs have photoluminescence and reflectance spectra comparable to those grown on conventional GaAs wafers. Flat and sub-nm RMS surface roughness and uniform DBR and MQW growth across the wafer were achieved. These results strongly support full VCSEL growth and fabrication on larger-area Ge wafers for the mass production of AlGaAs-based VCSELs.