부산대학교 도서관

Organic field-effect transistor nonvolatile memory (OFET-NVM) is an indispensable element for flexible and wearable electronics. The emerging multi-bit OFET-NVMs propose an effective strategy to further multiply the storage capacity. However, they have still suffered serious bottleneck issues of high programming/erasing (P/E) voltage and slow P/E speed. In this letter, we demonstrate a facile method to resolve the both bottlenecks, and investigate the relevant mechanisms. Our flexible OFET-NVMs exhibit excellent 2-bit memory features, with a fast P/E speed of $5~\mu \text{s}$ , low P/E voltages of ±15 V, highly reliable endurance, highly stable retention, and good mechanical durability. This work paves the way toward the development of next-generation high-speed, high-capacity flexible memory.