학술논문
Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications
Document Type
Conference
Author
Source
2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2023 IEEE. :118-123 Oct, 2023
Subject
Language
ISSN
2831-4999
Abstract
Aggressively scaled gallium nitride (GaN) high-electron-mobility transistor (HEMT) technologies with 40 nm T-gate lengths and extremely scaled ohmic-regrowth source-drain lengths ranging from 1500 nm to 150 nm comprise the low-loss, high-performance active devices in advanced high-power and high-efficiency monolithic microwave integrated circuits (MMICs). This paper outlines the latest device, circuit, and foundry access of three commercially available 40 nm GaN T-gate MMIC processes for millimeter-wave applications.