학술논문
High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects
Document Type
Conference
Author
Source
2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2023 IEEE. :137-140 Oct, 2023
Subject
Language
ISSN
2831-4999
Abstract
Gallium nitride (GaN) heterostructure field effect transistor (HFET) technology have become the main stream solution for RF communication infrastructure applications for 5G networks and beyond. This paper presents a 0.25 μm gate length delivering gain and efficiency improvements along with superior reliability and without compromising our low memory differentiation. The technology delivers 10 W/mm power density and 79% drain efficiency at 3.5 GHz while maintaining strong drain lag performance over temperature. A Doherty amplifier based on this technology delivers 56-59% efficiency, >16 dB gain over the 3.4-3.8 GHz band under a 20 MHz L TE signal with 38.5 dBm average output power with >16 dB gain. RF Intrinsic reliability tests predict> 1e7 hr. MTTF with < 0.01 FITs at 225°C.