학술논문

Temperature dependance of Intrinsic Spin Orbit Coupling Gap in Graphene probed by Terahertz photoconductivity
Document Type
Conference
Source
2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2023 48th International Conference on. :1-2 Sep, 2023
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Couplings
Temperature measurement
Temperature dependence
Temperature distribution
Boron
Graphene
Insulators
Language
ISSN
2162-2035
Abstract
Graphene is a quantum spin Hall insulator, with a nontrivial topological gap induced by the spin-orbit coupling. Such splitting is weak $(\sim 45 \mu$ eV) in the absence of external magnetic field. However, due to rather long spin-relaxation time, graphene is an attractive candidate for applications in quantum technologies. When it is encapsulated in hexagonal boron nitride, the coupling between graphene and the substrate compensates intrinsic spin-orbit coupling and decreases the nontrivial topological gap, which may lead to phase transition into a trivial band insulator state. In this work, we have measured experimentally the zero-field splittings in monolayer and bilayer graphene by the means of subterahertz photoconductivity-based electron spin resonance technique. The dependance in temperature of such splittings have been also studied in the 2-12K range. We observed a decrease of the spin splittings with increasing temperature. Such behavior might be understood from several physical mechanisms that could induce a temperature dependence of the spin-orbit coupling. These includes the difference in the expansion coefficients between the graphene and the boron nitride substrate or the metal contacts, the electronphonon interactions, and the presence of a magnetic order at low temperature.