부산대학교 도서관

In this work, results on a V band [55 $\mathbf{G H z}-71$ GHz] MMIC power amplifier (PA) based on InAlN/GaN HEMT technology with $0.10-\mu \mathrm{m}$ gate length and $4 \times 50 \mu \mathrm{m}$ gate width are presented. For that, a non-linear model of transistor has been developed and validated. Small and large signal measurements results of V-Band $P A$ show a good agreement with simulations. The amplifier delivers more than $22 \mathrm{~dB}$ of gain in the operating bandwidth. The large signal measurements show also good performances with an output power between $[31 \mathrm{dBm}-28.5$ $\mathrm{dBm}]$ and PAE ranging between $[17 \%-10 \%]$ in $[54 \mathrm{GHz}-60$ GHz] bandwidth.