학술논문

Blue and Green Low Threshold Laser Diodes With InAlN Claddings
Document Type
Periodical
Source
IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 35(24):1303-1306 Dec, 2023
Subject
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Optical reflection
Optical refraction
Lasers
Claddings
Wide band gap semiconductors
Optical waveguides
Aluminum gallium nitride
Blue lasers
green lasers
InAlGaN laser diode
low threshold
InAlN
AlInN
optical confinement
augmented reality
Language
ISSN
1041-1135
1941-0174
Abstract
We report on $300~\mu \text{m}$ short cavity single transverse mode LDs employing $n$ -type InAlN cladding layers. Threshold currents in the blue and green spectral range of 3.3 and 12.0 mA are demonstrated, respectively. This is accompanied by low electrical power consumption for optical powers in the mW range. Compared to conventional AlGaN-based devices having nominally identical active regions, an increase in modal gain is demonstrated, responsible for a ≈25% reduction in threshold currents. Fast-axis far field divergence angle measurements indicate that the modal gain improvement can be ascribed to a higher optical confinement factor when using InAlN.