학술논문
Fast Switching of GaN Transistors using a Boosted Gate Voltage
Document Type
Conference
Author
Source
2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) Power Electronics and Applications (EPE'23 ECCE Europe), 2023 25th European Conference on. :1-10 Sep, 2023
Subject
Language
Abstract
This paper presents a gate-driving strategy for achieving fast switching edges from GaN HEMT transistors. Switching losses can be reduced by using zero-ohms external gate resistance, whilst further reductions are achieved by overcoming the limitations of internal gate resistance with gate voltage boosting during key regions of the switching transition.