학술논문

ReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(11):5972-5976 Nov, 2023
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Training
Fatigue
Switches
Performance evaluation
Degradation
Deep learning
Task analysis
deep neural network (DNN)
fatigued
HfOₓ
in-memory
resistive random access memory (ReRAM)
Language
ISSN
0018-9383
1557-9646
Abstract
In this article, we propose an electrical bias technique to recover the accuracy of a degraded ${\text {HfO}}_{x}$ -based resistive random access memory (ReRAM) array in deep neural network (DNN) training. We simulate degradation through the application of ${\sim } {10}^{{4}}$ pulses having high pulse amplitude, resulting in a fatigued ReRAM array that fails to converge during training. We propose a novel technique, recovery stabilization (ReSta), which can recover the array accuracy up to the level it was before the fatigue was introduced. After using the proposed controlled recovery technique, we obtain an accuracy of 98% on the reduced Modified National Institute of Standard and Technology (MNIST) classification task, approaching a floating point baseline. This work demonstrates a viable pathway to recover the performance of the fatigued ReRAM crossbar arrays in in-memory DNN training.