학술논문
Creating excitons in II-VI quantum wells with large binding energies
Document Type
Conference
Author
Source
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices Optoelectronic and microelectronic materials and devices Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on. :73-80 2000
Subject
Language
Abstract
The wide bandgap II-VI semiconductors have unique properties which allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E/sub 1s/spl rarr/2s/>h/spl nu//sub LO/. High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical properties. Magnetic field and linewidth temperature dependent measurements have been used to determine the exciton binding energies and to investigate the exciton-LO phonon scattering processes. The results show the possibility of suppressing exciton-LO phonon scattering in these structures.