학술논문

A Reconfigurable CMOS Stack Rectifier With 22.8-dB Dynamic Range Achieving 47.91% Peak PCE for IoT/WSN Application
Document Type
Periodical
Source
IEEE Transactions on Very Large Scale Integration (VLSI) Systems IEEE Trans. VLSI Syst. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on. 31(10):1619-1623 Oct, 2023
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Transistors
Rectifiers
Stacking
Radio frequency
Logic gates
Very large scale integration
Topology
CMOS stack transistor
dynamic range (DR) power conversion efficiency (PCE)
multithreshold-voltage technique
radio-frequency (RF) energy harvesting (EH)
reconfigurable rectifier
RF-DC converters
Language
ISSN
1063-8210
1557-9999
Abstract
This brief proposes a 900-MHz novel CMOS-reconfigurable stack rectifier (RSR) implemented in a three-stage cross-coupled differential rectifier (CCDR) for battery-assist Internet-of-Things (IoT)/wireless sensor network (WSN) applications. A three-mode RSR is incorporated for an extended dynamic range (DR) input power level with a 100- $\text{k}\Omega $ load, fabricated in the 130-nm CMOS. The realized RSR achieves a wide DR power conversion efficiency (PCE) by reducing the ON-resistance ( ${R} _{\mathrm{\scriptscriptstyle ON}}$ ) in the low-power zone (LPZ) achieved by reducing the threshold voltage ( ${V} _{\text {th}}$ ) of the device and alternately increasing ${V} _{\text {th}}$ in the high-power zone (HPZ) by implementing the proposed reconfigurable stack transistor technique along with the multithreshold voltage (MTV) technique. The circuit observes a measured result of 47.91% in peak PCE at an input power of −14 dBm by driving a 100- $\text{k}\Omega $ load. The proposed circuit also achieved 22.8 and 16.3 dB of DR with a PCE over 20% and 30%, respectively. Compared to other state-of-the-art designs, our work exhibits better DR and PCE.