학술논문
Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition
Document Type
Conference
Author
Source
2023 Device Research Conference (DRC) 2023 Device Research Conference (DRC), 2023. :1-2 Jun, 2023
Subject
Language
ISSN
2640-6853
Abstract
Ferroelectric HfO 2 (Fe-HfO 2 ) doped with Zr etc. is widely investigated for the metal-ferroelectrics-Si field-effect transistor (MFSFET) nonvolatile memory because of its Si compatibility [1], [2]. We have reported the MFSFET with ferroelectric nondoped HfO 2 (FeND-HfO2) to suppress the threshold voltage (V TH ) variation and decrease the thermal budget for analog memory application [3]–[5]. Although the MFSFET with 5 nm-thick FeND-HfO 2 was realized, the plasma damage is necessary to be decreased during the Pt gate electrode deposition [6]. In this paper, we have investigated the V TH control of MFSFET utilizing Kr-plasma sputtering for Pt gate electrode deposition on 5 nm-thick FeND-HfO 2 .