학술논문

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations
Document Type
Conference
Source
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023
Subject
Components, Circuits, Devices and Systems
Energy consumption
Electron traps
Nonvolatile memory
Ferroelectric films
Random access memory
Voltage
Switches
Ferroelectric
Endurance
Recovery
Language
ISSN
2158-9682
Abstract
Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 10 12 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of $\triangle 2 \mathrm{P}_{\mathrm{r}}$ toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.