학술논문
Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer
Document Type
Conference
Author
Source
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023
Subject
Language
ISSN
2158-9682
Abstract
Inspired by techniques designed for 3D integration, a die-to-wafer (D2W) transfer method can enable MX 2 -channel devices in a semiconductor fab for either high-performance CFET or hybrid-integrated CMOS. A Collective D2W(CoD2W) technique was successfully developed to transfer epitaxial single-layer MX 2 from sapphire to 300mm device wafers which facilitates uniform and residue-free “dies”. We report a FEOL semiconductor compatible integration flow used to build back-gated transistors with high device yield and mobility values up to 50 cm 2 /Vs on SiO 2 back gate dielectrics.