학술논문

Characterization of Noise in CMOS Ring Oscillators at Cryogenic Temperatures
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(9):1547-1550 Sep, 2023
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Temperature measurement
Frequency measurement
Noise measurement
Ring oscillators
Current measurement
Semiconductor device measurement
Temperature dependence
Allan deviation
CMOS ring oscillator
noise
random telegraph noise
temperature
traps
Language
ISSN
0741-3106
1558-0563
Abstract
Allan deviation provides a means to characterize the time-dependence of noise in oscillators and potentially identify the source characteristics. Measurements on a 130 nm, 7-stage ring oscillator show that the Allan deviation declines from 300 K to 150 K as expected, but surprisingly increases from 150 K to 11 K. At low temperatures, the measured Allan deviation can be well fit using a few random telegraph noise (RTN) sources over the range of a few kilohertz to a few gigahertz. Further, the RTN characteristics evolve to reveal an enhanced role in low-frequency noise at lower temperatures.