학술논문

Study on the Magnetoresistance Caused by Orbital Angular Momentum
Document Type
Periodical
Source
IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 59(11):1-5 Nov, 2023
Subject
Fields, Waves and Electromagnetics
Orbits
Magnetic fields
Magnetoresistance
Torque
Films
Magnetic field measurement
Insulators
Ferrimagnetic insulator (FMI)
magnetoresistance
orbital angular momentum (OAM)
spintronics
Language
ISSN
0018-9464
1941-0069
Abstract
To reveal the effect of orbital angular momentum (OAM) on magnetic insulators, we studied the angular dependent magnetoresistance (ADMR) in a Tm3Fe5O12 (TmIG)/partially oxidized Cu (CuOx) heterostructure. The ADMR observed in TmIG/CuOx multilayer depends on the magnitude of the magnetic field rather than the magnetization of the magnetic layer, which is different from the orbital Rashba–Edelstein magnetoresistance proposed previously. By comparing the magnetoresistances with different stacking structures, the ADMR can be attributed to the interaction of the magnetic field and electrically induced OAM during the scattering or transporting of the OAM. Our findings not only reveal the transmission and accumulation of OAM in the insulator/CuOx heterojunction but also provide important experimental insight into the microscopic understanding of the OAM and magnetic field interaction.