학술논문
X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate
Document Type
Conference
Author
Menichelli, M.; Antognini, L.; Bashiri, A.; Bizzarri, M.; Calcagnile, L.; Caprai, M.; Caricato, A.P.; Catalano, R.; Cirrone, G.A.P.; Croci, T.; Cuttone, G.; Dunand, S.; Fabi, M.; Frontini, L.; Grimani, C.; Ionica, M.; Kanxheri, K.; Large, M.; Liberali, V.; Martino, M.; Maruccio, G.; Mazza, G.; Monteduro, A.G.; Morozzi, A.; Moscatelli, F.; Pallotta, S.; Papi, A.; Passeri, D.; Pedio, M.; Petasecca, M.; Petringa, G.; Peverini, F.; Piccolo, L.; Placidi, P.; Quarta, G.; Rizzato, S.; Rossi, G.; Sabbatini, F.; Stabile, A.; Servoli, L.; Talamonti, C.; Tosti, L.; Villani, M.; Wheadon, R.J.; Wyrsch, N.; Zema, N.
Source
2023 9th International Workshop on Advances in Sensors and Interfaces (IWASI) Advances in Sensors and Interfaces (IWASI), 2023 9th International Workshop on. :190-193 Jun, 2023
Subject
Language
ISSN
2836-7936
Abstract
Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the properties of a-Si:H its usage for dosimetry, beam monitoring for particle physics and nuclear medicine, as well as, radiation flux measurement for space applications and neutron flux measurement can be foreseen. In this paper the dosimetric X-ray response of p-i-n diodes deposited on Polyimide will be studied. In particular we will study the linearity of the photocurrent response to X-rays versus dose-rate from which we will extract the dosimetric sensitivity at various bias voltages. We will repeat this study for devices having two different areas (2 mm x 2 mm and 5 mm x 5 mm) also a measurement of stability of X-ray response versus time will be shown.