학술논문
In situ Post Etch Treatment on Ge-rich GST after etching in HBr-based plasma
Document Type
Conference
Author
Source
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Advanced Metallization Conference (MAM)(IITC/MAM), 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for. :1-3 May, 2023
Subject
Language
ISSN
2380-6338
Abstract
After patterning of Phase Change Memory (PCM) stack, residues are growing after etching and air exposure. This kind of defect might lead to severe impacts on the devices performances and reliability. In this work, we study the modification of the Ge-GST surface after HBr-based plasma etching and air exposure. We evaluated the CH 4 -based in situ post etch plasma treatments as a solution to protect Ge-GST and prevent the formation of residues.