부산대학교 도서관

Vertical GaN-on-GaN Schottky barrier diode (SBD) fully grown by hydride vapor phase epitaxy (HVPE) was first demonstrated in this article. Due to the low-carbon impurity concentration grown by HVPE, the field effective mobility has been increased from 734 to 1188 cm $^{{2}}\cdot \text{V}^{-{1}}\cdot \text{s}^{-{1}}$ . The fabricated device with this technology shows a low turn-on voltage of 0.52 V and a high ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of $7.1\times 10^{{9}}$ . The specific ON resistance ${R}_{ \mathrm{\scriptscriptstyle ON}}$ was 1.69 $\text{m}\Omega \cdot $ cm 2 at the current density of 500 A/cm 2 . High breakdown voltage ${V}_{\text {BR}}$ of 1370 V was achieved using He implantation technology. Among the reported vertical GaN SBDs with an indicated anode size, the highest figure of merit (FOM) ( ${V}_{\text {BR}}^{{2}}/{R}_{ \mathrm{\scriptscriptstyle ON}}{)}$ of 1.1 GW/cm 2 has been achieved to date.