부산대학교 도서관

We successfully demonstrate a significant suppression of the $V_{th}$ shift caused by the program/erase disturb in HfO 2 -based ferroelectric FET (FeFET) using a novel operation scheme. Polarization reversal is found to occur after volatile carrier trapping at the HfO 2 /SiO 2 interface. Dividing the disturb stress in to a train of short voltage pulses with intentional long intervals decouples the carrier trapping from the polarization reversal. Consequently, the immunity to disturbance is improved by more than four orders of magnitude. We model the disturb suppression mechanism as follows: insufficient interfacial charge trapping unstabilizes the reversed polarization to keep the domain undisturbed. Our findings show a promising guideline for improving the reliability of the FeFET array operation.