부산대학교 도서관

We report on the hybrid silicon carbide (SiC) pixel detector for charged-particle beam monitors in high-energy physics experiments. To demonstrate comparable performances of the state-of-the-art Si pixel detectors, SiC pixel sensors with a die size of $25 {\mathrm{ mm}}^{2}$ were fabricated based on the p-n diode structure. We combined $12 \times 12$ diodes of a pixel size of 160 and $270 ~\mu {\mathrm{ m}}$ pitches with the dedicated readout application-specific integrated circuit (ASIC) by indium and gold ( ${\mathrm{ In/Au}}$ ) stud-bump technology. The front-end chip was designed in 0.35- $\mu {\mathrm{ m}}$ complementary metal oxide semiconductor (CMOS) technology, with consideration of a hybrid configuration. Each pixel circuit consists of a charge-sensitive amplifier (CSA) and bandpass filter, optimized for the SiC sensor. The low noise performance achieved an equivalent noise charge (ENC) of 55 $\pm \,\,5{\mathrm{ e}}^{-}$ (rms). The spectrum of $^{241}{\mathrm{ Am}}$ shows an energy resolution of ${\mathrm{ 1.72 keV}}$ (FWHM) at 17.8-keV $\gamma $ -rays at room temperature. The obtained image with $^{90}{\mathrm{ Sr}}$ is a proof of a single minimum ionizing particle (MIP) detection capability with all pixels. Those results prospect a future application of the SiC pixel sensors to high-intensity proton extinction monitors in the coherent muon-to-electron transition (COMET) muon experiment at the Japan proton accelerator research complex (J-PARC).