학술논문

Neutron Displacement Damage Cross Section in GaN: Numerical Evaluations and Differences With Si
Document Type
Periodical
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(8):1870-1877 Aug, 2023
Subject
Nuclear Engineering
Bioengineering
Neutrons
Silicon
Databases
Ions
Monte Carlo methods
Gallium
Uncertainty
Cross section
displacement damage
GaN
Geant4
Monte Carlo neutron
nonionizing energy loss (NIEL)
total nonionizing dose (TNID)
Language
ISSN
0018-9499
1558-1578
Abstract
The displacement damage cross section of the neutron–GaN interaction is calculated in the energy range from millielectronvolts to gigaelectronvolts. Different calculation methods are used and discussed to estimate the modeling uncertainty. The nonionizing energy loss (NIEL) and the relative damage factors are also deduced. Differences with the neutron–silicon interactions are presented, and the impacts on the estimation of total nonionizing dose (TNID) levels are evaluated as a function of neutron energy.