학술논문
3D Integrated Laser Attach Technology on a 300-mm Monolithic CMOS Silicon Photonics Platform
Document Type
Periodical
Author
Bian, Y.; Ramachandran, K.; Wu, Z.; Hedrick, B.; Dezfulian, K.K.; Houghton, T.; Nummy, K.; Fisher, D.W.; Hirokawa, T.; Donegan, K.; Afzal, F.O.; Esopi, M.; Karra, V.; Lee, W.S.; Sorbara, M.; Lubguban, J.; Cho, J.K.; Cao, R.; Ding, H.; Chandran, S.; Rakowski, M.; Aboketaf, A.; Krishnamurthy, S.; Mills, S.; Peng, B.; Pepper, J.; Deka, S.; Feng, W.; Rishton, S.; Boudreau, M.; Logan, D.; Hickey, R.; Gomes, P.C.; Murray, K.; Dewanjee, A.; Riggs, D.; Robson, N.; Melville, I.; Augur, R.; Fox, R.; Gupta, V.; Yu, A.; Giewont, K.; Pellerin, J.; Letavic, T.
Source
IEEE Journal of Selected Topics in Quantum Electronics IEEE J. Select. Topics Quantum Electron. Selected Topics in Quantum Electronics, IEEE Journal of. 29(3: Photon. Elec. Co-Inte. and Adv. Trans. Print.):1-19 Jun, 2023
Subject
Language
ISSN
1077-260X
1558-4542
1558-4542
Abstract
Enabling cost-effective and power-efficient laser source on a silicon photonics (SiPh) platform is a major goal that has been highly sought after. In the past two decades, tremendous effort has been made to develop various on-chip integration techniques to enhance SiPh circuits with efficient light-emitting materials. Here we review our recent advancements in hybrid flip-chip integration of III-V lasers on a 300-mm monolithic SiPh platform. By leveraging advanced complementary metal oxide semiconductor (CMOS) manufacturing processes, we have demonstrated wafer-scale laser attach based on a precisely controlled cavity formed on a silicon-on-insulator (SOI) substrate. The laser integration process is aided by precise mechanical alignment features on the SiPh wafer and high-precision fiducials on the laser. Efficient laser-to-SiPh-circuit butt-coupling with optical power up to 20 mW was demonstrated through wafer- and module-level characterizations. Key performance metrics including side-mode suppression ratio, mode-hopping, and relative intensity noise were characterized after laser integration. In addition, early reliability assessments were performed on laser-attached SOI wafers and Si submount assemblies to understand the long-term performance stability of the lasers on the monolithic platform. To further enhance the performance of the laser-integrated chip, we explored alternative spot-size converters that could simultaneously enable improved coupling efficiency and relaxed fabrication tolerance, thus showing great promise over traditional designs.