학술논문
Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (RON xQGG) of 3.1 mohm-nC at 40V and fT/fMAX of 130/680GHz
Document Type
Conference
Author
Then, Han Wui; Radosavljevic, M.; Koirala, P.; Beumer, M.; Bader, S.; Zubair, A.; Hoff, T.; Jordan, R.; Michaelos, T.; Peck, J.; Ban, I.; Nair, N.; Vora, H.; Joshi, K.; Meric, I.; Oni, A.; Desai, N.; Krishnamurthy, H.; Ravichandran, K.; Yu, J.; Beach, S.; Frolov, D.; Hubert, A.; Latorre-Rey, A.; Rami, S.; Rangaswamy, J.; Yu, Q.; Fischer, P.
Source
2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :35.1.1-35.1.4 Dec, 2022
Subject
Language
ISSN
2156-017X
Abstract
We demonstrate a high voltage enhancement-mode (E-mode) high-k GaN-on-300mm Si(111) NMOS transistor capable of best-in-class performance and figure-of-merits for integrated power electronics and RF mm-wave. Using scaled submicron-length field-plate, the high-voltage GaN NMOS transistors demonstrate excellent R ON