학술논문

E-Beam Induced Micropattern Generation and Amorphization of L-Cysteine-Functionalized Graphene Oxide Nano-composites
Document Type
Working Paper
Source
Colloid and Interface Science Communications Volume 58, January 2024, 100766
Subject
Condensed Matter - Materials Science
Physics - Applied Physics
Language
Abstract
The evolution of dynamic processes in graphene-family materials are of great interest for both scientific purposes and technical applications. Scanning electron microscopy and transmission electron microscopy outstand among the techniques that allow both observing and controlling such dynamic processes in real time. On the other hand, functionalized graphene oxide emerges as a favorable candidate from graphene-family materials for such an investigation due to its distinctive properties, that encompass a large surface area, robust thermal stability, and noteworthy electrical and mechanical properties after its reduction. Here, we report on studies of surface structure and adsorption dynamics of L-Cysteine on electrochemically exfoliated graphene oxides basal plane. We show that electron beam irradiation prompts an amorphization of functionalized graphene oxide along with the formation of micropatterns of controlled geometry composed of L-Cysteine-Graphene oxide nanostructures. The controlled growth and predetermined arrangement of micropatterns as well as controlled structure disorder induced by e beam amorphization, in its turn potentially offering tailored properties and functionalities paving the way for potential applications in nanotechnology, sensor development, and surface engineering. Our findings demonstrate that graphene oxide can cover L-Cysteine in such a way to provide a control on the positioning of emerging microstructures about 10-20 um in diameter. Besides, Raman and SAED measurement analyses yield above 50% amorphization in a material. The results of our studies demonstrate that such a technique enables the direct creation of micropatterns of L-Cysteine-Graphene oxide eliminating the need for complicated mask patterning procedures.