학술논문
Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer
Document Type
Working Paper
Author
Milanesio, M.; Paolozzi, L.; Moretti, T.; Cardella, R.; Kugathasan, T.; Martinelli, F.; Picardi, A.; Semendyaev, I.; Zambito, S.; Nakamura, K.; Tabuko, Y.; Togawa, M.; Elviretti, M.; Rücker, H.; Cadoux, F.; Cardarelli, R.; Débieux, S.; Favre, Y.; Fenoglio, C. A.; Ferrere, D.; Gonzalez-Sevilla, S.; Iodice, L.; Kotitsa, R.; Magliocca, C.; Nessi, M.; Pizarro-Medina, A.; Iglesias, J. Sabater; Saidi, J.; Pinto, M. Vicente Barreto; Iacobucci, G.
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Subject
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Abstract
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 {\mu}m thick epilayer with a resistivity of 350 {\Omega}cm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2.
Comment: Submitted to JINST
Comment: Submitted to JINST