학술논문
Reflectivity of VUV-sensitive Silicon Photomultipliers in Liquid Xenon
Document Type
Working Paper
Author
Wagenpfeil, M.; Ziegler, T.; Schneider, J.; Fieguth, A.; Murra, M.; Schulte, D.; Althueser, L.; Huhmann, C.; Weinheimer, C.; Michel, T.; Anton, G.; Adhikari, G.; Kharusi, S. Al; Angelico, E.; Arnquist, I. J.; Badhrees, I.; Bane, J.; Beck, D.; Belov, V.; Bhatta, T.; Bolotnikov, A.; Breur, P. A.; Brodsky, J. P.; Brown, E.; Brunner, T.; Caden, E.; Cao, G. F.; Chambers, C.; Chana, B.; Charlebois, S. A.; Chernyak, D.; Chiu, M.; Cleveland, B.; Craycraft, A.; Daniels, T.; Darroch, L.; Der Mesrobian-Kabakian, A.; Croix, A. de St; Deslandes, K.; DeVoe, R.; Di Vacri, M. L.; Dolinski, M. J.; Echevers, J.; Elbeltagi, M.; Fabris, L.; Fairbank, D.; Fairbank, W.; Farine, J.; Ferrara, S.; Feyzbakhsh, S.; Gallina, G.; Gautam, P.; Giacomini, G.; Gingras, C.; Goeldi, D.; Gorham, A.; Gornea, R.; Gratta, G.; Hansen, E. V.; Hardy, C. A.; Harouaka, K.; Heffner, M.; Hoppe, E. W.; House, A.; Hughes, M.; Iverson, A.; Jamil, A.; Jewell, M.; Karelin, A.; Kaufman, L. J.; Krücken, R.; Kuchenkov, A.; Kumar, K. S.; Lan, Y.; Larson, A.; Leach, K. G.; Leonard, D. S.; Li, G.; Li, S.; Li, Z.; Licciardi, C.; Lindsay, R.; MacLellan, R.; Martel-Dion, P.; Massacret, N.; McElroy, T.; Peregrina, M. Medina; Mong, B.; Moore, D. C.; Murray, K.; Nattress, J.; Natzke, C. R.; Newby, R. J.; Nolet, F.; Nusair, O.; Ondze, J. C. Nzobadila; Odgers, K.; Odian, A.; Orrell, J. L.; Ortega, G. S.; Ostrovskiy, I.; Overman, C. T.; Parent, S.; Piepke, A.; Pocar, A.; Pratte, J. -F.; Raguzin, E.; Ramonnye, G. J.; Rasiwala, H.; Rescia, S.; Retière, F.; Richard, C.; Richman, M.; Ringuette, J.; Robinson, A.; Rossignol, T.; Rowson, P. C.; Roy, N.; Saldanha, R.; Sangiorgio, S.; Soma, A. K.; Spadoni, F.; Stekhanov, V.; Stiegler, T.; Tarka, M.; Thibado, S.; Tidball, A.; Todd, J.; Totev, T.; Triambak, S.; Tsang, R.; Vachon, F.; Veeraraghavan, V.; Viel, S.; Vivo-Vilches, C.; Walent, M.; Wichoski, U.; Worcester, M.; Wu, S. X.; Xia, Q.; Yan, W.; Yang, L.; Zeldovich, O.
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Subject
Language
Abstract
Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of M\"unster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45{\deg} angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36% at an angle of incidence of 20{\deg} for the four samples and increases to up to 65% at 70{\deg} for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.
Comment: 18 pages, 11 figures
Comment: 18 pages, 11 figures