학술논문
Precision calculation of energy levels for four-valent Si I
Document Type
Working Paper
Source
Subject
Language
Abstract
We report results of the calculation of the low-lying levels of neutral Si using a combination of the configuration interaction and many-body perturbation theory (CI+MBPT method). We treat Si I as an atom with four valence electrons and use two different starting approximations, namely $V^{N-2}$ and $V^{N-4}$. We conclude that both approximations provide comparable accuracy, on the level of 1%.