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In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7 MeV protons irradiation

Document Type

Article

Author

Gaubas, E.; Kovalevskij, V.; Kadys, A.; Gaspariunas, M.; Mickevicius, J.; Jasiunas, A.; Remeikis, V.; Uleckas, A.; Tekorius, A.; Vaitkus, J.; Velicka, A.

Source

In Nuclear Inst. and Methods in Physics Research, B 15 July 2013 307:370-372

Subject

Language

ISSN

0168-583X

Online Access

Full Text (ScienceDirect 종량제) Web of Science JCR 저널정보 Scopus Find it@PNU

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