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High quality 4H-SiC homo-epitaxial wafer using the optimal C/Si ratio

Document Type

Article

Author

Zhao, L.X.; Yang, L.; Wu, H.W.

Source

In Journal of Crystal Growth 15 January 2020 530

Subject

Language

ISSN

0022-0248

Online Access

Full Text (ScienceDirect 종량제) Web of Science JCR 저널정보 Scopus Find it@PNU

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