학술논문


Investigation of the antistatic Ability of Low-noise Microwave Device
Document Type
Book Chapter
Source
In Applied Electrostatics (ICAES 2004) 2004:358-360
Subject
Language
Abstract
Publisher Summary This chapter presents the electrostatic susceptibility of low-noise, high frequency triodes with the electrostatic simulator of Human Body Model (HBM). Threshold value and threshold model are confirmed. Damage mechanism of the component is further investigated by using failure analyze instruments. The foundation is made to improve technology and raise the electrostatic discharge (ESD) threshold level. ESD is an event of electrical overstress that transfers a finite amount of charge between two objects at different potentials. ESD can cause direct, indirect, and latent failure in electronic devices. Such an event accounts for more than 25% of the failures throughout the electronic components life starting from wafer fabrication extending to assembly and testing, and finally ending at the user's site. As electronic devices become faster and smaller, their sensitivity to ESD increases. So, ESD component level stress testing continues to be a critical step in the qualification process of electronic products, such as integrated circuits (ICs).

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