학술논문
First-principles study of oxygen and aluminum defects in β-Si3 N4 : Compensation and charge trapping.
Document Type
Article
Author
Source
Subject
*OXYGEN
*ALUMINUM
*SILICON nitride
*DENSITY
*ELECTRON affinity
*MATERIALS science
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Language
ISSN
0927-0256
Abstract
Highlights: [•] Native defects compensation by opposite charged impurities reduces trap density. [•] Compensation mechanism can be generally applied to any charge trap material. [•] Oxygen donates electrons to native Si-clusters at 3.5eV in the gap of Si3N4. [•] Al induces deep traps at 1.6eV and are not expected to influence the trap density. [•] Large reconstruction crucial for native Si-cluster traps of high electron affinity. [Copyright &y& Elsevier]