학술논문

p-type ion-implantation doping of Al0.75Ga0.25Sb with Be, C, Mg, and Zn.
Document Type
Article
Source
Journal of Applied Physics. 2/1/1996, Vol. 79 Issue 3, p1365. 6p. 1 Chart, 10 Graphs.
Subject
*ION implantation
*ALUMINUM
*GALLIUM
*ANTIMONY
Language
ISSN
0021-8979
Abstract
Presents information on a study which investigated the p-type ion-implantation doping of aluminum[sub0.75] gallium[sub0.25] antimony. Experimental procedure; Results; Discussion.